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The Study Of Spin Fluctuation-Induced High-Temperature Superconductivity Of Thorium-Doped Gadolinium Iron Arsenic Oxide (Gd1−Xthxfeaso)

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dc.contributor.author Tolasa, Kebede
dc.date.accessioned 2024-11-07T07:27:02Z
dc.date.available 2024-11-07T07:27:02Z
dc.date.issued 2024-03
dc.identifier.uri http://hdl.handle.net/123456789/4067
dc.description.abstract The study explores the impact of spin fluctuation on the superconductivity of the Gd1−xThxFeAsO superconductor through a theoretical investigation. Employing a model Hamiltonian, which accounts for the interplay between superconductivity and magnetism within the material, the study incorporates spin exchange interactions attributed to localized electrons. This theoretical framework is solved using the equation of motion approach within Green’s function formalism. Theoretical expressions are derived to elucidate the relationship between key parameters such as the superconducting critical temperature (Tc), superconducting order parameter ( ), and magnetic transition temperature (Tm) concerning the strength of interaction between Cooper paired electrons and magnetic ordering strength. Notably, the results reveal a nuanced relationship where an increase in phonon-mediated coupling interaction strength leads to a rise in the superconducting critical temperature, while an increase in antiferromagnetic ordering strength results in the suppression of Tc. These findings provide valuable insights into the intricate interplay between spin fluctuations and superconductivity in Gd1−xThxFeAsO, thus contributing to the understanding of the mechanisms underlying high-temperature superconductivity in this system en_US
dc.language.iso en en_US
dc.publisher Ambo University en_US
dc.subject superconductor order parameters en_US
dc.subject superconducting transition temperature en_US
dc.subject magnetic order parameters en_US
dc.title The Study Of Spin Fluctuation-Induced High-Temperature Superconductivity Of Thorium-Doped Gadolinium Iron Arsenic Oxide (Gd1−Xthxfeaso) en_US
dc.type Thesis en_US


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