Effects of Temperature, Dopant Concentration, and Electric Field On Ferromagnetic Prop erties Of Manganese Doped Gallium Arsenide (Ga1−xMnxAs) Diluted Magnetic Semiconductor

Abstract

Starting with a Heisenberg Hamiltonian model type ,we have studied the effects temperature fluctuations, dopant concentrations, and applied fields. Through theoretical analyses, we uncover significant insights into magnon dispersion energy, magnetization behavior, and heat capacity. Our findings reveal that temperature and dopant concentration play pivotal roles in influencing magnon dispersion energy, with increasing temperature enhancing thermal agitation and dopants introducing additional magnetic moments. More over, we elucidate the intricate interplay between temperature, dopant concentration, and external fields on magneti- zation, observing temperature-induced reductions and dopant-induced augmentations. Electric and magnetic fields further modulate magnetization, highlighting the complexity of magnon behavior in response to external stimuli. Additionally, temperature, dopant concentration, and applied fields exert notable effects on magnon heat capacity, with temperature enhancing it and higher dopant concentrations suppressing it. These theoretical insights provide crucial groundwork for engineering magnetic materials with tailored properties for applications in spintronics and magnonics, thus advancing our understanding and potential applications of magnonics