Abstract:
Photovoltaic technologies, with an essentially infinite energy source, large total capacity, and
demonstrated cost competitiveness, are well-positioned to meet growing global demand for clean
energy. The photovoltaic is advantageous primarily for its direct optical band gap which is well matched to the standard AM 1.5G solar spectrum, and its high absorption coefficient. Major
advances in device performance have been achieved through improved current collection and fill
factor, however, the open-circuit voltage (VOC) of devices remains limited compared to the band
gap-determined maximum achievable VOC. The voltage deficit could be minimized through
various approaches, and this work addresses it through progressive structural changes to a
device. Absorbers of less than 2 µm were pursued for ultimate electron-reflector devices which
incorporate a wide band-gap material behind the absorber to induce a back-surface field via a
back-side conduction-band offset for improved VOC. An optimized and stable base structure is
necessary to quantify characteristics and improvements in progressive devices with additional
material layers. In this study the temperature, band gap and efficiency are studied, how they
affect the performance of the solar cell. The Shockley–Queisser equation puts a theoretical limit
on the efficiency of single-junction mono- silicon (Si), Germanium (Ge), gallium arsenide
(GaAs) and Cadmium Telluride (CdTe) of solar cells (meaning, a definite single value for the
band gap energy). Variation in temperature inversely affects the efficiency. With increase in
Band Gap efficiency also increase till band gap reaches; moreover, increase in band gap
increases efficiency and also open circuit voltage value gets larger .
